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NTD5806N, NVD5806N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
40
45.5
29.5
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 40 V
T J = 25 ° C
T J = 150 ° C
1.0
100
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.4
5.8
2.5
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V, I D = 15 A
12.7
19
m W
CHARGES, CAPACITANCES AND GATE RESISTANCES
V GS = 4.5 V, I D = 10 A
17.8
26
Input Capacitance
C iss
860
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz,
V DS = 25 V
130
100
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 10 V, V DS = 20 V,
I D = 30 A
17
0.95
3.4
4.5
38
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
10.6
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DD = 20 V,
I D = 30 A, R G = 2.5 W
93.7
14.2
4.3
Turn ? On Delay Time
t d(on)
8.0
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DD = 20 V,
I D = 30 A, R G = 2.5 W
49
19.8
2.6
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 10 A
T J = 25 ° C
T J = 150 ° C
0.86
0.69
1.2
V
Reverse Recovery Time
t RR
18.8
ns
Charge Time
Discharge Time
ta
tb
V GS = 0 V, dIs/dt = 100 A/ m s,
I S = 30 A
11.8
7.0
Reverse Recovery Charge
Q RR
10.9
nC
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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